Spin-dependent tunneling in diluted magnetic semiconductor trilayer structures
نویسندگان
چکیده
منابع مشابه
Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures
Silicon is an ideal material for spintronic applications due to its weak spin-orbit interaction and long spin lifetime [1,2]. Spin injection from a ferromagnetic electrode into n-type silicon was claimed at room [3] and elevated [4] temperatures. However, the amplitude of the spin-accumulation signal extracted from a three-terminal injection method [2,3] is orders of magnitude higher than predi...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2005
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.72.125350